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Manufacturer	ONSEMI
Type of transistor	N-JFET / N-MOSFET
Technology	SiC
Polarisation	unipolar
Kind of transistor	cascode
Drain-source voltage	750V
Drain current	120A
Pulsed drain current	588A
Power dissipation	714W
Case	TO247-4
Gate-source voltage	-25...25V
On-state resistance	12.9mΩ
Mounting	THT
Gate charge	164nC
Kind of package	tube
Kind of channel	enhancement

UJ4SC075006K4S

Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 120A

Specification