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Manufacturer	DIODES INCORPORATED
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	30V
Drain current	5.7A
Power dissipation	2.1W
Case	SO8
On-state resistance	24mΩ
Mounting	SMD
Gate charge	12.9nC
Kind of channel	enhancement

ZXMN3F31DN8TA

Transistor: N-MOSFET x2; unipolar; 30V; 5.7A; 2.1W; SO8

Specification