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Manufacturer	DIODES INCORPORATED
Type of transistor	P-MOSFET x2
Polarisation	unipolar
Drain-source voltage	-30V
Drain current	-3.6A
Pulsed drain current	-16.2A
Power dissipation	1.25W
Case	SO8
Gate-source voltage	±20V
On-state resistance	0.11Ω
Mounting	SMD
Kind of package	reel, tape
Kind of channel	enhancement

ZXMP3A17DN8TA

Transistor: P-MOSFET x2; unipolar; -30V; -3.6A; Idm: -16.2A; 1.25W

Specification