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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	100V
Drain current	590A
Case	Y3-DCB
Electrical mounting	FASTON connectors, screw
Polarisation	unipolar
On-state resistance	2.1mΩ
Pulsed drain current	2.36kA
Power dissipation	2.2kW
Technology	HiPerFET™
Kind of channel	enhancement
Gate charge	2µC
Reverse recovery time	300ns
Gate-source voltage	±20V
Features of semiconductor devices	Kelvin terminal
Mechanical mounting	screw

VMO550-01F

Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW

Specification