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Manufacturer | MICROCHIP TECHNOLOGY | ||
Type of transistor | IGBT | ||
Technology | NPT, POWER MOS 8® | ||
Collector-emitter voltage | 650V | ||
Collector current | 100A | ||
Power dissipation | 892W | ||
Case | T-Max | ||
Gate-emitter voltage | ±30V | ||
Pulsed collector current | 400A | ||
Mounting | THT | ||
Gate charge | 312nC | ||
Kind of package | tube | ||
Turn-on time | 105ns | ||
Turn-off time | 336ns |