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Manufacturer | INFINEON TECHNOLOGIES | |
Type of transistor | N/P-MOSFET | |
Technology | HEXFET® | |
Polarisation | unipolar | |
Drain-source voltage | 55/-55V | |
Drain current | 4.7/-3.4A | |
Power dissipation | 4.7W | |
Case | SO8 | |
Gate-source voltage | ±20V | |
On-state resistance | 43/95mΩ | |
Mounting | SMD | |
Kind of package | reel | |
Kind of channel | enhancement |