B2M035120YP
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Manufacturer: BASiC SEMICONDUCTOR
Manufacturer part number:
B2M035120YP
TME Symbol:
B2M035120YP
Specification
Manufacturer | BASiC SEMICONDUCTOR | ||
Type of transistor | N-MOSFET | ||
Technology | SiC | ||
Polarisation | unipolar | ||
Drain-source voltage | 1.2kV | ||
Drain current | 60A | ||
Pulsed drain current | 190A | ||
Power dissipation | 375W | ||
Case | TO247PLUS-4 | ||
Gate-source voltage | -4...18V | ||
On-state resistance | 35mΩ | ||
Mounting | THT | ||
Gate charge | 115nC | ||
Kind of package | tube | ||
Kind of channel | enhancement | ||
Features of semiconductor devices | Kelvin terminal |
Gross weight7.215 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
* B2M035120YPNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 17.60 USDGross price for quantities from 1 pcs - 17.60 USD
Net price for quantities from 3 pcs - 15.90 USDGross price for quantities from 3 pcs - 15.90 USD
Net price for quantities from 10 pcs - 14.00 USDGross price for quantities from 10 pcs - 14.00 USD
Net price for quantities from 30 pcs - 12.60 USDGross price for quantities from 30 pcs - 12.60 USD
Hardly available product
Packaging method by the manufacturerTube = 30 pcs