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Manufacturer	BASiC SEMICONDUCTOR
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	41A
Pulsed drain current	123A
Power dissipation	238W
Case	TO263-7
Gate-source voltage	-4...18V
On-state resistance	40mΩ
Mounting	SMD
Gate charge	90nC
Kind of package	reel, tape
Kind of channel	enhancement
Features of semiconductor devices	Kelvin terminal

B2M040120R

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W

Specification

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand