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Manufacturer | BASiC SEMICONDUCTOR | ||
Type of transistor | IGBT | ||
Technology | Field Stop, SiC SBD, Trench | ||
Collector-emitter voltage | 650V | ||
Collector current | 50A | ||
Power dissipation | 357W | ||
Case | TO247-4 | ||
Gate-emitter voltage | ±20V | ||
Pulsed collector current | 200A | ||
Mounting | THT | ||
Gate charge | 308nC | ||
Kind of package | tube | ||
Turn-on time | 54ns | ||
Turn-off time | 476ns | ||
Features of semiconductor devices | integrated anti-parallel diode |