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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	650V
Drain current	12A
Pulsed drain current	30A
Power dissipation	90W
Case	DPAK
Gate-source voltage	±30V
On-state resistance	0.26Ω
Mounting	SMD
Gate charge	24nC
Kind of package	reel, tape
Kind of channel	enhancement

FCD260N65S3

Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK

Specification