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FDP4D5N10C

Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 150W; TO220-3

Product family

Manufacturer: ONSEMI

Manufacturer part number:
FDP4D5N10C
TME Symbol:
FDP4D5N10C

Specification

Manufacturer
ONSEMI
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
100V
Drain current
128A
Pulsed drain current
512A
Power dissipation
150W
Case
TO220-3
Gate-source voltage
±20V
On-state resistance
4.5mΩ
Mounting
THT
Gate charge
48nC
Kind of package
tube
Kind of channel
enhancement
Gross weight2 g
Certificates
See other products in this category: THT N channel transistors ONSEMI,
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FDP4D5N10C
0 in TME stock
Net price for quantities from 1 pcs - 6.25 USDGross price for quantities from 1 pcs - 6.25 USD
Net price for quantities from 2 pcs - 4.63 USDGross price for quantities from 2 pcs - 4.63 USD
Net price for quantities from 10 pcs - 3.88 USDGross price for quantities from 10 pcs - 3.88 USD
Net price for quantities from 20 pcs - 3.74 USDGross price for quantities from 20 pcs - 3.74 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.