+15,00,000 products in offer

7,000 packages per day

+3,00,000 clients from 150 countries

Quick Buy Favourites
Cart

We would like to inform that on 20.09.2026 at 09:00 AM - 12:00 PM (CEST) some problems with access to the website and online orders may occur. We apologize for any inconvenience.

GD10PJX65F1S

Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A

Product family

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD10PJX65F1S
TME Symbol:
GD10PJX65F1S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
boost chopper, IGBT three-phase bridge OE output, NTC thermistor, three-phase diode bridge
Max. off-state voltage
650V
Collector current
10A
Case
F1.1
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
20A
Technology
Trench FS IGBT
Mechanical mounting
screw
Gross weight24.99 g
Certificates
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
*
GD10PJX65F1S
19 in TME stock
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Net price for quantities from 1 pcs - 34.77 USDGross price for quantities from 1 pcs - 34.77 USD
Net price for quantities from 3 pcs - 30.75 USDGross price for quantities from 3 pcs - 30.75 USD
Net price for quantities from 10 pcs - 27.65 USDGross price for quantities from 10 pcs - 27.65 USD
Net price for quantities from 25 pcs - 25.82 USDGross price for quantities from 25 pcs - 25.82 USD