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GD1400HFX170P2S

Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A


Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD1400HFX170P2S
TME Symbol:
GD1400HFX170P2S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge
Max. off-state voltage
1.7kV
Collector current
1.4kA
Case
P2.0
Electrical mounting
screw
Gate-emitter voltage
±20V
Pulsed collector current
2.8kA
Technology
Trench FS IGBT
Mechanical mounting
screw
Gross weight1.21 kg
Certificates
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
*
GD1400HFX170P2S
0 in TME stock
No. of pieces (Multiplicity: 8)
Minimum order quantity: 8.
Multiplicity: 8.
Product for special order