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GD15PJY120F1S

Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1

Product family

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD15PJY120F1S
TME Symbol:
GD15PJY120F1S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
boost chopper, IGBT three-phase bridge OE output, NTC thermistor, three-phase diode bridge
Max. off-state voltage
1.2kV
Collector current
15A
Case
F1.1
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
30A
Technology
Advanced Trench FS IGBT
Mechanical mounting
screw
Gross weight24.91 g
Certificates
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
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GD15PJY120F1S
24 in TME stock
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Net price for quantities from 1 pcs - 39.17 USDGross price for quantities from 1 pcs - 39.17 USD
Net price for quantities from 3 pcs - 34.58 USDGross price for quantities from 3 pcs - 34.58 USD
Net price for quantities from 10 pcs - 31.11 USDGross price for quantities from 10 pcs - 31.11 USD
Net price for quantities from 25 pcs - 28.99 USDGross price for quantities from 25 pcs - 28.99 USD
Packaging method by the manufacturer:Tray = 25 pcs