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GD15PJY120L2S

Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2

Product family

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD15PJY120L2S
TME Symbol:
GD15PJY120L2S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
boost chopper, IGBT three-phase bridge OE output, NTC thermistor, three-phase diode bridge
Max. off-state voltage
1.2kV
Collector current
15A
Case
L2.2
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
30A
Technology
Advanced Trench FS IGBT
Mechanical mounting
screw
Gross weight24.34 g
Certificates
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
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GD15PJY120L2S
16 in TME stock
Net price for quantities from 1 pcs - 37.88 USDGross price for quantities from 1 pcs - 37.88 USD
Net price for quantities from 3 pcs - 33.54 USDGross price for quantities from 3 pcs - 33.54 USD
Net price for quantities from 12 pcs - 30.14 USDGross price for quantities from 12 pcs - 30.14 USD
Net price for quantities from 24 pcs - 28.03 USDGross price for quantities from 24 pcs - 28.03 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTray = 24 pcs