+15,00,000 products in offer

7,000 packages per day

+3,00,000 clients from 150 countries

Quick Buy Favourites
Cart

We would like to inform you that, due to the Anant Chaturdashi celebrations, our office in India will be closed on 25 September. Thank you for your understanding. We encourage you to use our website, where you can place an order, access previously prepared quotations and check the status of your current purchases.

GD200HFX170C2S

Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A


Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD200HFX170C2S
TME Symbol:
GD200HFX170C2S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge
Max. off-state voltage
1.7kV
Collector current
200A
Case
C2 62mm
Electrical mounting
FASTON connectors, screw
Gate-emitter voltage
±20V
Pulsed collector current
400A
Technology
Trench FS IGBT
Mechanical mounting
screw
Gross weight300 g
Certificates
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
*
GD200HFX170C2S
0 in TME stock
No. of pieces (Multiplicity: 12)
Minimum order quantity: 12.
Multiplicity: 12.
Product for special order