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GD300HFX170C2S

Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A


Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD300HFX170C2S
TME Symbol:
GD300HFX170C2S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge
Max. off-state voltage
1.7kV
Collector current
300A
Case
C2 62mm
Electrical mounting
FASTON connectors, screw
Gate-emitter voltage
±20V
Pulsed collector current
600A
Technology
Trench FS IGBT
Mechanical mounting
screw
Gross weight300 g
Certificates
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
*
GD300HFX170C2S
0 in TME stock
No. of pieces (Multiplicity: 12)
Minimum order quantity: 12.
Multiplicity: 12.
Net price for quantities from 12 pcs - 133.75 USDGross price for quantities from 12 pcs - 133.75 USD