+15,00,000 products in offer

7,000 packages per day

+3,00,000 clients from 150 countries

We would like to inform you that, due to the Mahmatma Gandhi Jayanti celebrations, our office in India will be closed on 2 October. Thank you for your understanding. We encourage you to use our website, where you can place an order, access previously prepared quotations and check the status of your current purchases.

Data processing in progress Data processing in progress

Your credit limit has been exceeded. Your order will be accepted but not realized. The delivery schedule will not be set. Please contact a TME employee.

The task was successfully completed.

An unexpected error ocurred. Please try again.

Manufacturer	STARPOWER SEMICONDUCTOR
Type of semiconductor module	IGBT
Semiconductor structure	diode/transistor
Topology	boost chopper, IGBT three-phase bridge OE output, NTC thermistor, three-phase diode bridge
Max. off-state voltage	1.2kV
Collector current	35A
Case	F5.1
Electrical mounting	Press-in PCB
Gate-emitter voltage	±20V
Pulsed collector current	70A
Technology	Advanced Trench FS IGBT
Mechanical mounting	screw

GD35PJY120F5S

Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1

Specification