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GD50PJX65L3S

Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A

Product family

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD50PJX65L3S
TME Symbol:
GD50PJX65L3S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
boost chopper, IGBT three-phase bridge OE output, NTC thermistor, three-phase diode bridge
Max. off-state voltage
650V
Collector current
50A
Case
L3.0
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
100A
Technology
Trench FS IGBT
Mechanical mounting
screw
Gross weight39 g
Certificates
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
*
GD50PJX65L3S
0 in TME stock
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Net price for quantities from 1 pcs - 59.42 USDGross price for quantities from 1 pcs - 59.42 USD
Net price for quantities from 4 pcs - 52.60 USDGross price for quantities from 4 pcs - 52.60 USD
Net price for quantities from 16 pcs - 47.23 USDGross price for quantities from 16 pcs - 47.23 USD