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IXA40PG1200DHGLB

Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV

Manufacturer: IXYS

Manufacturer part number:
IXA40PG1200DHGLB
TME Symbol:
IXA40PG1200DHGLB

Specification

Manufacturer
IXYS
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
IGBT half-bridge
Max. off-state voltage
1.2kV
Collector current
45A
Case
SMPD-B
Electrical mounting
SMT
Gate-emitter voltage
±20V
Pulsed collector current
105A
Power dissipation
230W
Technology
ISOPLUS™, Sonic FRD™
Gross weight7.965 g
Certificates
See other products in this category: IGBT modules IXYS
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IXA40PG1200DHGLB
Product withdrawn from the offer
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Packaging method by the manufacturerTube = 20 pcs