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IXA70I1200NA

Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B

Manufacturer: IXYS

Manufacturer part number:
IXA70I1200NA
TME Symbol:
IXA70I1200NA

Specification

Manufacturer
IXYS
Type of semiconductor module
IGBT
Semiconductor structure
single transistor
Max. off-state voltage
1.2kV
Collector current
65A
Case
SOT227B
Electrical mounting
screw
Gate-emitter voltage
±20V
Pulsed collector current
150A
Power dissipation
350W
Technology
XPT™
Features of semiconductor devices
high voltage
Mechanical mounting
screw
Gross weight34.54 g
Certificates
See other products in this category: IGBT modules IXYS
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IXA70I1200NA
Product withdrawn from the offer
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Packaging method by the manufacturer:Tube = 10 pcs