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IXDN55N120D1

Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B

Manufacturer: IXYS

Manufacturer part number:
IXDN55N120D1
TME Symbol:
IXDN55N120D1

Specification

Manufacturer
IXYS
Type of semiconductor module
IGBT
Semiconductor structure
single transistor
Max. off-state voltage
1.2kV
Collector current
62A
Case
SOT227B
Electrical mounting
screw
Gate-emitter voltage
±20V
Pulsed collector current
124A
Power dissipation
450W
Technology
NPT
Features of semiconductor devices
high voltage
Mechanical mounting
screw
Gross weight30 g
Certificates
See other products in this category: IGBT modules IXYS
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IXDN55N120D1
Product withdrawn from the offer
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Packaging method by the manufacturerTube = 10 pcs