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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	250V
Drain current	120A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	17mΩ
Pulsed drain current	400A
Power dissipation	690W
Technology	GigaMOS™, HiPerFET™
Kind of channel	enhancement
Gate charge	255nC
Reverse recovery time	200ns
Gate-source voltage	±30V
Mechanical mounting	screw

IXFN140N25T

Module; single transistor; 250V; 120A; SOT227B; screw; Idm: 400A

Specification