PMDXB1200UPEZ
Transistor: P-MOSFET x2; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Manufacturer: NEXPERIA
Manufacturer part number:
PMDXB1200UPEZ
TME Symbol:
PMDXB1200UPEZ
Specification
Manufacturer | NEXPERIA | |
Type of transistor | P-MOSFET x2 | |
Technology | Trench | |
Polarisation | unipolar | |
Drain-source voltage | -30V | |
Drain current | -0.26A | |
Pulsed drain current | -1.7A | |
Case | DFN1010B-6, SOT1216 | |
Gate-source voltage | ±8V | |
On-state resistance | 2.4Ω | |
Mounting | SMD | |
Gate charge | 1.2nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement | |
Version | ESD |
Gross weight0.1 g
Certificates
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* PMDXB1200UPEZNo. of pieces (Multiplicity: 5,000)
0 in TME stock
Product for special order