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Manufacturer	NEXPERIA
Type of transistor	N-MOSFET x2
Technology	Trench
Polarisation	unipolar
Drain-source voltage	20V
Drain current	0.4A
Pulsed drain current	2.5A
Case	DFN1010B-6, SOT1216
Gate-source voltage	±8V
On-state resistance	1Ω
Mounting	SMD
Gate charge	0.7nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

PMDXB600UNELZ

Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A

Specification

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