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SCTL35N65G2V

Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 160A; 417W

Manufacturer: STMicroelectronics

Manufacturer part number:
SCTL35N65G2V
TME Symbol:
SCTL35N65G2V

Specification

Manufacturer
STMicroelectronics
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
650V
Drain current
40A
Pulsed drain current
160A
Power dissipation
417W
Case
PowerFLAT 8x8
Gate-source voltage
-10...22V
On-state resistance
67mΩ
Mounting
SMD
Gate charge
73nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight1 g
Certificates
See other products in this category: SMD N channel transistors STMicroelectronics,
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SCTL35N65G2V
0 in TME stock
Net price for quantities from 1 pcs - 15.57 USDGross price for quantities from 1 pcs - 15.57 USD
Net price for quantities from 5 pcs - 14.53 USDGross price for quantities from 5 pcs - 14.53 USD
No. of pieces (Multiplicity: 1)