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SI3552DV-T1-E3

Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A

Manufacturer: VISHAY

Manufacturer part number:
SI3552DV-T1-E3
TME Symbol:
SI3552DV-T1-E3

Specification

Manufacturer
VISHAY
Type of transistor
N/P-MOSFET
Technology
TrenchFET®
Polarisation
unipolar
Drain-source voltage
30/-30V
Drain current
2.5/-1.8A
Pulsed drain current
-7...8A
Power dissipation
1.15W
Case
SC74, TSOP6
Gate-source voltage
±20V
On-state resistance
360/175mΩ
Mounting
SMD
Gate charge
3.6/3.2nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.029 g
Certificates
See other products in this category: Multi channel transistors VISHAY
*
SI3552DV-T1-E3
Product withdrawn from the offer
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Packaging method by the manufacturer:Reel = 3,000 pcs