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SI7288DP-T1-GE3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 20A; Idm: 50A

Documentation EN
Product family

Manufacturer: VISHAY

Manufacturer part number:
SI7288DP-T1-GE3
TME Symbol:
SI7288DP-T1-GE3

Specification

Manufacturer
VISHAY
Type of transistor
N-MOSFET x2
Technology
TrenchFET®
Polarisation
unipolar
Drain-source voltage
40V
Drain current
20A
Pulsed drain current
50A
Power dissipation
15.6W
Case
PowerPAK® SO8
Gate-source voltage
±20V
On-state resistance
22mΩ
Mounting
SMD
Gate charge
15nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.158 g
Certificates
See other products in this category: Multi channel transistors VISHAY,
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SI7288DP-T1-GE3
1907 in TME stock
Net price for quantities from 1 pcs - 2.07 USDGross price for quantities from 1 pcs - 2.07 USD
Net price for quantities from 5 pcs - 1.76 USDGross price for quantities from 5 pcs - 1.76 USD
Net price for quantities from 10 pcs - 1.55 USDGross price for quantities from 10 pcs - 1.55 USD
Net price for quantities from 50 pcs - 1.09 USDGross price for quantities from 50 pcs - 1.09 USD
Net price for quantities from 100 pcs - 0.95 USDGross price for quantities from 100 pcs - 0.95 USD
Net price for quantities from 500 pcs - 0.84 USDGross price for quantities from 500 pcs - 0.84 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerReel = 3,000 pcs