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STGP10M65DF2

Transistor: IGBT; 650V; 10A; 115W; TO220AB

Documentation EN
Documentation EN
Product family

Manufacturer: STMicroelectronics

Manufacturer part number:
STGP10M65DF2
TME Symbol:
STGP10M65DF2

Specification

Manufacturer
STMicroelectronics
Type of transistor
IGBT
Collector-emitter voltage
650V
Collector current
10A
Power dissipation
115W
Case
TO220AB
Gate-emitter voltage
±20V
Pulsed collector current
40A
Mounting
THT
Gate charge
28nC
Kind of package
tube
Features of semiconductor devices
integrated anti-parallel diode
Gross weight1.986 g
Certificates
See other products in this category: THT IGBT transistors STMicroelectronics,
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STGP10M65DF2
150 in TME stock
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Net price for quantities from 1 pcs - 1.84 USDGross price for quantities from 1 pcs - 1.84 USD
Net price for quantities from 10 pcs - 1.17 USDGross price for quantities from 10 pcs - 1.17 USD
Net price for quantities from 50 pcs - 1.03 USDGross price for quantities from 50 pcs - 1.03 USD
Packaging method by the manufacturer:Tube = 50 pcs