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Manufacturer	STMicroelectronics
Type of transistor	IGBT
Collector-emitter voltage	1.2kV
Collector current	8A
Power dissipation	167W
Case	TO220AB
Gate-emitter voltage	±20V
Pulsed collector current	32A
Mounting	THT
Gate charge	32nC
Kind of package	tube
Features of semiconductor devices	integrated anti-parallel diode

STGP8M120DF3

Transistor: IGBT; 1.2kV; 8A; 167W; TO220AB

Specification