STGWT40H65DFB
Transistor: IGBT; 650V; 40A; 283W; TO3P
Manufacturer: STMicroelectronics
Manufacturer part number:
STGWT40H65DFB
TME Symbol:
STGWT40H65DFB
Specification
Manufacturer | STMicroelectronics | ||
Type of transistor | IGBT | ||
Collector-emitter voltage | 650V | ||
Collector current | 40A | ||
Power dissipation | 283W | ||
Case | TO3P | ||
Gate-emitter voltage | ±20V | ||
Pulsed collector current | 160A | ||
Mounting | THT | ||
Gate charge | 0.21µC | ||
Kind of package | tube | ||
Features of semiconductor devices | integrated anti-parallel diode |
Gross weight5.2 g
Certificates
See other products in this category: THT IGBT transistors STMicroelectronics,
* STGWT40H65DFBNo. of pieces (Multiplicity: 1)
27 in TME stock
Net price for quantities from 1 pcs - 4.37 USDGross price for quantities from 1 pcs - 4.37 USD
Net price for quantities from 3 pcs - 4.06 USDGross price for quantities from 3 pcs - 4.06 USD
Net price for quantities from 10 pcs - 3.39 USDGross price for quantities from 10 pcs - 3.39 USD
Net price for quantities from 30 pcs - 3.23 USDGross price for quantities from 30 pcs - 3.23 USD
Packaging method by the manufacturerTube = 30 pcs