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Manufacturer | STMicroelectronics | ||
Type of transistor | IGBT | ||
Collector-emitter voltage | 650V | ||
Collector current | 40A | ||
Power dissipation | 283W | ||
Case | TO3P | ||
Gate-emitter voltage | ±30V | ||
Pulsed collector current | 160A | ||
Mounting | THT | ||
Gate charge | 0.21µC | ||
Kind of package | tube | ||
Features of semiconductor devices | integrated anti-parallel diode |