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Manufacturer	MICROCHIP TECHNOLOGY
Type of transistor	N-MOSFET
Technology	POWER MOS 5®
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	8A
Pulsed drain current	32A
Power dissipation	280W
Case	D3PAK
Gate-source voltage	±30V
On-state resistance	1.6Ω
Mounting	SMD
Gate charge	230nC
Kind of package	tube
Kind of channel	enhancement

APT1201R6SVFRG

Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A

Specification

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand