B2M032120Y
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Manufacturer: BASiC SEMICONDUCTOR
Manufacturer part number:
B2M032120Y
TME Symbol:
B2M032120Y
Specification
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1.2kV | |
Drain current | 60A | |
Pulsed drain current | 190A | |
Power dissipation | 375W | |
Case | TO247PLUS-4 | |
Gate-source voltage | -4...18V | |
On-state resistance | 50mΩ | |
Mounting | THT | |
Gate charge | 40nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Gross weight7.01 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
* B2M032120YNo. of pieces (Multiplicity: 1)
51 in TME stock
Net price for quantities from 1 pcs - 17.60 USDGross price for quantities from 1 pcs - 17.60 USD
Net price for quantities from 3 pcs - 15.91 USDGross price for quantities from 3 pcs - 15.91 USD
Net price for quantities from 10 pcs - 14.00 USDGross price for quantities from 10 pcs - 14.00 USD
Net price for quantities from 30 pcs - 12.61 USDGross price for quantities from 30 pcs - 12.61 USD
Packaging method by the manufacturerTube = 30 pcs