B2M040120H
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 123A; 333W
Manufacturer: BASiC SEMICONDUCTOR
Manufacturer part number:
B2M040120H
TME Symbol:
B2M040120H
Specification
Manufacturer | BASiC SEMICONDUCTOR | ||
Type of transistor | N-MOSFET | ||
Technology | SiC | ||
Polarisation | unipolar | ||
Drain-source voltage | 1.2kV | ||
Drain current | 48A | ||
Pulsed drain current | 123A | ||
Power dissipation | 333W | ||
Case | TO247-3 | ||
Gate-source voltage | -4...18V | ||
On-state resistance | 40mΩ | ||
Mounting | THT | ||
Gate charge | 90nC | ||
Kind of package | tube | ||
Kind of channel | enhancement |
Gross weight1 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
* B2M040120HNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 3.66 USDGross price for quantities from 1 pcs - 3.66 USD
Net price for quantities from 10 pcs - 3.30 USDGross price for quantities from 10 pcs - 3.30 USD
Net price for quantities from 30 pcs - 2.92 USDGross price for quantities from 30 pcs - 2.92 USD
Net price for quantities from 120 pcs - 2.61 USDGross price for quantities from 120 pcs - 2.61 USD
Net price for quantities from 300 pcs - 2.44 USDGross price for quantities from 300 pcs - 2.44 USD