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Manufacturer | BASiC SEMICONDUCTOR | ||
Type of transistor | N-MOSFET | ||
Technology | SiC | ||
Polarisation | unipolar | ||
Drain-source voltage | 650V | ||
Drain current | 47A | ||
Pulsed drain current | 108A | ||
Power dissipation | 250W | ||
Case | TO247-3 | ||
Gate-source voltage | -5...18V | ||
On-state resistance | 40mΩ | ||
Mounting | THT | ||
Gate charge | 60nC | ||
Kind of package | tube | ||
Kind of channel | enhancement |