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FDP2D3N10C

Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 214W; TO220-3

Product family

Manufacturer: ONSEMI

Manufacturer part number:
FDP2D3N10C
TME Symbol:
FDP2D3N10C

Specification

Manufacturer
ONSEMI
Type of transistor
N-MOSFET
Technology
PowerTrench®
Polarisation
unipolar
Drain-source voltage
100V
Drain current
157A
Pulsed drain current
888A
Power dissipation
214W
Case
TO220-3
Gate-source voltage
±20V
On-state resistance
2.3mΩ
Mounting
THT
Gate charge
152nC
Kind of package
tube
Kind of channel
enhancement
Gross weight2 g
Certificates
See other products in this category: THT N channel transistors ONSEMI,
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FDP2D3N10C
0 in TME stock
Net price for quantities from 1 pcs - 7.41 USDGross price for quantities from 1 pcs - 7.41 USD
Net price for quantities from 2 pcs - 6.91 USDGross price for quantities from 2 pcs - 6.91 USD
Net price for quantities from 5 pcs - 5.99 USDGross price for quantities from 5 pcs - 5.99 USD
Net price for quantities from 10 pcs - 5.24 USDGross price for quantities from 10 pcs - 5.24 USD
Net price for quantities from 20 pcs - 4.59 USDGross price for quantities from 20 pcs - 4.59 USD
Net price for quantities from 50 pcs - 4.40 USDGross price for quantities from 50 pcs - 4.40 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.