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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	250V
Drain current	17A
Pulsed drain current	108A
Power dissipation	210W
Case	TO3PN
Gate-source voltage	±30V
On-state resistance	0.11Ω
Mounting	THT
Gate charge	65nC
Kind of package	tube
Kind of channel	enhancement

FQA27N25

Transistor: N-MOSFET; unipolar; 250V; 17A; Idm: 108A; 210W; TO3PN

Specification