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GD30PJX65L2S

Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 30A

Product family

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD30PJX65L2S
TME Symbol:
GD30PJX65L2S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
boost chopper, IGBT three-phase bridge OE output, NTC thermistor, three-phase diode bridge
Max. off-state voltage
650V
Collector current
30A
Case
L2.2
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
60A
Technology
Trench FS IGBT
Mechanical mounting
screw
Gross weight24 g
Certificates
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
*
GD30PJX65L2S
0 in TME stock
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Net price for quantities from 1 pcs - 37.39 USDGross price for quantities from 1 pcs - 37.39 USD
Net price for quantities from 3 pcs - 33.02 USDGross price for quantities from 3 pcs - 33.02 USD
Net price for quantities from 12 pcs - 29.68 USDGross price for quantities from 12 pcs - 29.68 USD
Net price for quantities from 24 pcs - 27.73 USDGross price for quantities from 24 pcs - 27.73 USD