IXBN75N170
Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B
Manufacturer: IXYS
Manufacturer part number:
IXBN75N170
TME Symbol:
IXBN75N170
Specification
Manufacturer | IXYS | ||
Type of semiconductor module | IGBT | ||
Semiconductor structure | single transistor | ||
Max. off-state voltage | 1.7kV | ||
Collector current | 75A | ||
Case | SOT227B | ||
Electrical mounting | screw | ||
Gate-emitter voltage | ±20V | ||
Pulsed collector current | 680A | ||
Power dissipation | 625W | ||
Technology | BiMOSFET™ | ||
Features of semiconductor devices | high voltage | ||
Mechanical mounting | screw |
Gross weight37.09 g
Certificates
See other products in this category: IGBT modules IXYS,
* IXBN75N170No. of pieces (Multiplicity: 1)
1 in TME stock
Net price for quantities from 1 pcs - 111.57 USDGross price for quantities from 1 pcs - 111.57 USD
Net price for quantities from 3 pcs - 100.24 USDGross price for quantities from 3 pcs - 100.24 USD
Net price for quantities from 10 pcs - 93.56 USDGross price for quantities from 10 pcs - 93.56 USD
Packaging method by the manufacturerTube = 10 pcs