IXFN360N15T2
Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Manufacturer: IXYS
Manufacturer part number:
IXFN360N15T2
TME Symbol:
IXFN360N15T2
Specification
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 150V | |
Drain current | 310A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 4mΩ | |
Pulsed drain current | 900A | |
Power dissipation | 1.07kW | |
Technology | GigaMOS™, HiPerFET™, TrenchT2™ | |
Kind of channel | enhancement | |
Gate charge | 715nC | |
Reverse recovery time | 150ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Gross weight37.17 g
Certificates
See other products in this category: Transistor modules IXYS,
* IXFN360N15T2No. of pieces (Multiplicity: 300)
0 in TME stock
Product for special order
Packaging method by the manufacturerTube = 10 pcs