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Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 800V | |
Drain current | 53A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 0.14Ω | |
Pulsed drain current | 150A | |
Power dissipation | 1.04kW | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 250nC | |
Reverse recovery time | 250ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |