MKI50-12F7
Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 350W
Manufacturer: IXYS
Manufacturer part number:
MKI50-12F7
TME Symbol:
MKI50-12F7
Specification
Manufacturer | IXYS | ||
Type of semiconductor module | IGBT | ||
Semiconductor structure | transistor/transistor | ||
Topology | H-bridge | ||
Max. off-state voltage | 1.2kV | ||
Collector current | 45A | ||
Case | E2-Pack | ||
Application | motors | ||
Electrical mounting | Press-in PCB | ||
Gate-emitter voltage | ±20V | ||
Pulsed collector current | 100A | ||
Power dissipation | 350W | ||
Technology | HiPerFRED™, NPT | ||
Mechanical mounting | screw |
Gross weight10 g
Certificates
See other products in this category: IGBT modules IXYS,
* MKI50-12F7No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 156.91 USDGross price for quantities from 1 pcs - 156.91 USD
Net price for quantities from 3 pcs - 138.59 USDGross price for quantities from 3 pcs - 138.59 USD
Net price for quantities from 6 pcs - 125.99 USDGross price for quantities from 6 pcs - 125.99 USD