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SCT3120ALGC11

Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247

Product family

Manufacturer: ROHM SEMICONDUCTOR

Manufacturer part number:
SCT3120ALGC11
TME Symbol:
SCT3120ALGC11

Specification

Manufacturer
ROHM SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
650V
Drain current
21A
Pulsed drain current
52A
Power dissipation
103W
Case
TO247
Gate-source voltage
-4...22V
On-state resistance
156mΩ
Mounting
THT
Gate charge
38nC
Kind of package
tube
Kind of channel
enhancement
Gross weight3 g
Certificates
See other products in this category: THT N channel transistors ROHM SEMICONDUCTOR,
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SCT3120ALGC11
0 in TME stock
Net price for quantities from 1 pcs - 9.51 USDGross price for quantities from 1 pcs - 9.51 USD
Net price for quantities from 3 pcs - 8.85 USDGross price for quantities from 3 pcs - 8.85 USD
Net price for quantities from 6 pcs - 8.16 USDGross price for quantities from 6 pcs - 8.16 USD
Net price for quantities from 12 pcs - 7.80 USDGross price for quantities from 12 pcs - 7.80 USD
No. of pieces (Multiplicity: 1)