SI3473DDV-T1-GE3
Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -30A
Manufacturer: VISHAY
Manufacturer part number:
SI3473DDV-T1-GE3
TME Symbol:
SI3473DDV-T1-GE3
Specification
Manufacturer | VISHAY | |
Type of transistor | P-MOSFET | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | -12V | |
Drain current | -8A | |
Pulsed drain current | -30A | |
Power dissipation | 3.6W | |
Case | SC74, TSOP6 | |
Gate-source voltage | ±8V | |
On-state resistance | 38.8mΩ | |
Mounting | SMD | |
Gate charge | 57nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight0.1 g
Certificates
See other products in this category: SMD P channel transistors VISHAY,
* SI3473DDV-T1-GE3No. of pieces (Multiplicity: 3 000)
0 in TME stock
Net price for quantities from 3000 pcs - 0.17 USDGross price for quantities from 3000 pcs - 0.17 USD
Net price for quantities from 9000 pcs - 0.16 USDGross price for quantities from 9000 pcs - 0.16 USD