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Manufacturer: MICROCHIP TECHNOLOGY
Manufacturer | MICROCHIP TECHNOLOGY | ||
Type of transistor | IGBT | ||
Technology | NPT, POWER MOS 8® | ||
Collector-emitter voltage | 1.2kV | ||
Collector current | 40A | ||
Power dissipation | 500W | ||
Case | T-Max | ||
Gate-emitter voltage | ±30V | ||
Pulsed collector current | 160A | ||
Mounting | THT | ||
Gate charge | 0.21µC | ||
Kind of package | tube | ||
Turn-on time | 47ns | ||
Turn-off time | 232ns | ||
Features of semiconductor devices | integrated anti-parallel diode | ||
Part status | Not recommended for new designs |