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Manufacturer | MICROCHIP TECHNOLOGY | ||
Type of transistor | IGBT | ||
Technology | POWER MOS 8®, PT | ||
Collector-emitter voltage | 900V | ||
Collector current | 43A | ||
Power dissipation | 337W | ||
Case | TO247-3 | ||
Gate-emitter voltage | ±30V | ||
Pulsed collector current | 129A | ||
Mounting | THT | ||
Gate charge | 116nC | ||
Kind of package | tube | ||
Turn-on time | 28ns | ||
Turn-off time | 246ns | ||
Features of semiconductor devices | integrated anti-parallel diode |