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Manufacturer | MICROCHIP TECHNOLOGY | ||
Type of transistor | N-MOSFET x2 | ||
Polarisation | unipolar | ||
Kind of transistor | RF | ||
Drain-source voltage | 500V | ||
Drain current | 10A | ||
Power dissipation | 910W | ||
Case | T3A-8 | ||
Gate-source voltage | ±30V | ||
Kind of package | tube | ||
Frequency | 128MHz | ||
Kind of channel | depletion | ||
Semiconductor structure | common source | ||
Features of semiconductor devices | dual gate | ||
Output power | 900W | ||
Electrical mounting | FASTON connectors, soldering, THT | ||
Open-loop gain | 16dB | ||
Efficiency | 55% | ||
Mechanical mounting | screw |