IXBN42N170A
Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Manufacturer: IXYS
Manufacturer part number:
IXBN42N170A
TME Symbol:
IXBN42N170A
Specification
Manufacturer | IXYS | ||
Type of semiconductor module | IGBT | ||
Semiconductor structure | single transistor | ||
Max. off-state voltage | 1.7kV | ||
Collector current | 21A | ||
Case | SOT227B | ||
Electrical mounting | screw | ||
Gate-emitter voltage | ±20V | ||
Pulsed collector current | 265A | ||
Power dissipation | 313W | ||
Technology | BiMOSFET™ | ||
Features of semiconductor devices | high voltage | ||
Mechanical mounting | screw |
Gross weight36.86 g
Certificates
See other products in this category: IGBT modules IXYS,
* IXBN42N170ANo. of pieces (Multiplicity: 1)
4 in TME stock
Net price for quantities from 1 pcs - 42.59 USDGross price for quantities from 1 pcs - 42.59 USD
Net price for quantities from 3 pcs - 38.29 USDGross price for quantities from 3 pcs - 38.29 USD
Net price for quantities from 10 pcs - 35.68 USDGross price for quantities from 10 pcs - 35.68 USD
Packaging method by the manufacturerTube = 10 pcs