IXDN75N120
Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Manufacturer: IXYS
Manufacturer part number:
IXDN75N120
TME Symbol:
IXDN75N120
Specification
Manufacturer | IXYS | |
Type of semiconductor module | IGBT | |
Semiconductor structure | single transistor | |
Max. off-state voltage | 1.2kV | |
Collector current | 150A | |
Case | SOT227B | |
Electrical mounting | screw | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 190A | |
Power dissipation | 660W | |
Technology | NPT | |
Mechanical mounting | screw |
Gross weight34.72 g
Certificates
See other products in this category: IGBT modules IXYS,
* IXDN75N120No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 39.63 USDGross price for quantities from 1 pcs - 39.63 USD
Packaging method by the manufacturerTube = 10 pcs